دیتاشیت STP6NK60Z

STx6NK60Z(FP-1)

مشخصات دیتاشیت

نام دیتاشیت STx6NK60Z(FP-1)
حجم فایل 451.367 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

دانلود دیتاشیت STx6NK60Z(FP-1)

STx6NK60Z(FP-1) Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STP6NK60Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 110W
  • Total Gate Charge (Qg@Vgs): 46nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 905pF@25V
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,3A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP6N

دیتاشیت محصولات مشابه